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| PNP SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSUE 2 MARCH 94 FEATURES * 12 Volt VCEO * fT=400MHz ZTX510 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Base Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO IB IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE -12 -12 -4 -40 -200 300 -55 to +175 UNIT V V V mA mA mW C ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER SYMBOL V(BR)CBO VCEO(sus) ICBO VCE(sat) VBE(sat) -0.76 -0.82 -1.7 30 40 20 400 6 6 60 90 MIN. TYP. Collector-Base Breakdown Voltage Collector-Emitter Sustaining Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage -12 -12 -0.1 -0.15 -0.2 -0.5 -0.98 -1.2 150 MAX. UNIT V V A CONDITIONS. IC=-10A IC=-10mA VCB=-6V IC=-10mA, IB=-1mA* IC=-30mA, IB=-3mA* IC=-100mA, IB=-10mA* IC=-10mA, IB=-1mA* IC=-30mA, IB=-3mA* IC=-100mA, IB=-10mA* IC=-10mA, VCE=-0.3V* IC=-30mA, VCE=-0.5V* IC=-100mA, VCE=-1V* V V V V V V Static Forward Current hFE Transfer Ratio Transition Frequency Output Capacitance Input Capacitance Switching Times fT Cobo Cibo ton toff MHz pF pF ns ns IC=-30mA, VCE=-5V f=100MHz VCB=-5V, f=140KHz VEB=-0.5V, f=140KHz IC=-30mA, IB1=IB2=-1.5mA *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-186 ZTX510 TYPICAL CHARACTERISTICS 1000 -250 IB=-5.0mA IB=-4.5mA IB=-4.0mA IB=-3.5mA IB=-3.0mA IB=-2.5mA IB=-2.0mA IB=-1.5mA -100 IB=-1.0mA IB=-0.5mA 800 VCB=-5V f=100MHz -200 fT - (MHz) 400 IC - (mA) 600 -150 200 -50 0 0 -10 -20 -30 -40 -50 0 0 -1 -2 -3 -4 -5 IC - (mA) VCE(sat) - (Volts) IC v fT VCE(sat) v IC -20 IB=-100A to 0A in 10A steps -16 IB=-100A -100 -80 IB=-10mA IB=-8mA IB=-6mA IB=-4mA IB=-2mA IB=-1mA IC - (mA) -8 IB=0A IC - (mA) 0 -4 -8 -12 -16 -20 -12 -60 -40 -4 -20 0 0 -0.6 -0.7 -0.8 -0.9 -1.0 -1.1 VCE(sat) - (Volts) VBE - (Volts) VCE v IC VBE v IC 3-187 |
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